| PART |
Description |
Maker |
| K4S561632J-UC_L50 K4S561632J-UC_L75 K4S561632J-UC_ |
256Mb J-die SDRAM Specification
16M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
64M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Samsung semiconductor
|
| M2V64S30DTP-7 M2V64S20DTP-7 M2V64S40DTP-6 M2V64S40 |
64M Synchronous DRAM
|
Mitsubishi Electric Corporation
|
| M2V64S20DTP M2V64S20DTP-6 M2V64S20DTP-6L M2V64S20D |
64M Synchronous DRAM
From old datasheet system
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M2V64S50ETP |
64M Single Data Rate Synchronous DRAM
|
Elpida Memory
|
| HYM72V64M636BLF8-H HYM72V64M636BLF8-K HYM72V64M636 |
64M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA144
SDRAM - SO DIMM 512MB
|
HYNIX SEMICONDUCTOR INC
|
| MT18LSDT6472G-133XX |
64M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168 MO-161, DIMM-168
|
Unisonic Technologies Co., Ltd.
|
| MC-4564EC726PFB-A80 |
64M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168 SOCKET TYPE, DIMM-168
|
Elpida Memory, Inc.
|
| M5M4V64S30ATP-10 M5M4V64S20ATP-8A A98007_A M5M4V64 |
64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M5M4V64S20ATP-8 M5M4V64S20ATP-10 M5M4V64S20ATP-12 |
From old datasheet system
64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| HYB39S256407FF-7 |
64M X 4 SYNCHRONOUS DRAM, 5.4 ns, PBGA54 0.400 X 0.875 INCH, 0.80 MM PITCH, GREEN, PLASTIC, TSOP2-54
|
Infineon Technologies AG
|
| HYB39S16400AT-10 HYB39S16400AT-8 Q67100-Q1333 Q671 |
16 MBit Synchronous DRAM 4M X 4 SYNCHRONOUS DRAM, 8 ns, PDSO44
16 MBit Synchronous DRAM 2M X 8 SYNCHRONOUS DRAM, 10 ns, PDSO44
Multipole Connector 1M X 16 SYNCHRONOUS DRAM, 10 ns, PDSO50
DB25PH 16兆位同步DRAM
16 MBit Synchronous DRAM 16兆位同步DRAM
|
Siemens Semiconductor Group
SIEMENS AG
|
| MC-4R128CEE6C-845 MC-4R128CEE6B MC-4R128CEE6B-653 |
64M X 16 DIRECT RAMBUS DRAM MODULE, 53 ns, DMA184
Direct Rambus DRAM RIMM Module 128M-BYTE 64M-WORD x 16-BIT
|
NEC Corp.
NEC[NEC]
|
